KIOXIA America, Inc. today announced that it has begun sampling 1 new Universal Flash Storage 2 (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

(Nanowerk Spotlight) The human brain processes complex information while consuming merely the power of a dim light bulb. This remarkable efficiency stems from synapses, the connections between brain ...

Materials with high magnetoelectric coupling could be useful in novel devices such as magnetic computer memories, chemical sensors and quantum computers. When researchers irradiate a thin layer of ...

Researchers have demonstrated that the layered multiferroic material nickel iodide (NiI2) may be the best candidate yet for devices such as magnetic computer memory that are extremely fast and compact ...

Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of ...

The idea of a living organism replacing a silicon chip inevitably evokes science-fiction scenarios. However, a recent study ...

Researchers have developed a new type of memory device that they say could reduce the energy consumption of artificial intelligence (AI) by at least 1,000. Called computational random-access memory ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, reinforcing its leadership in ...

A new study reveals that insulating buffer layers are no longer needed for ultrathin magnetic racetrack devices, unlocking new paths for seamless integration with functional substrates. Modern ...

With transistors and logic gates as our basic building blocks, we can begin to construct the actual circuits that make up computer memory. One of the simplest memory circuits is the AND gate, which ...