在10纳米以下的先进半导体技术节点中，精确控制平带电压（VFB）对于调节阈值电压至关重要。本研究系统地研究了将掺钛的HfO2（HTO）中间层引入金属氧化物半导体电容器中，以调节VFB同时保持良好的电气性能。通过原子层沉积（ALD）超循环制备了约2纳米厚的HTO ...

BILTHOVEN, THE NETHERLANDS, December 11, 2008 – Further extending its leadership in the critical atomic layer deposition (ALD) market, ASM International N.V. (NASDAQ: ASMI and Euronext Amsterdam: ASM) ...

Material development for semiconductor and thin film materials requires a full understanding of the material characteristics and how they impact each other. The Thermo Scientific™ Nexsa™ XPS System ...

这篇研究通过实验与密度泛函理论（DFT）结合，揭示了稀释氢氟酸（HF）预处理调控SiO2表面羟基化以促进HfO2选择性原子层沉积 ...

The Nature Index 2025 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

The Nature Index 2024 Research Leaders — previously known as Annual Tables — reveal the leading institutions and countries/territories in the natural and health sciences, according to their output in ...

SCOTTS VALLEY, Calif.–Aviza Technology Inc. Monday (July 12) rolled out what the company claims is the first batch-wafer atomic layer deposition (ALD) tool that demonstrates uniformity equal or ...