SemiQ Inc. has released its QSiC 1,200-V third-generation silicon-carbide (SiC) MOSFET that shrinks the die size while improving switching speeds and efficiency. The device is 20% smaller compared to ...

本文探讨了影响高速SiC MOSFET开关特性的关键因素，包括器件特性、工作条件和外部电路；解释了开关损耗的主要影响因素，并确定了影响器件行为和使用的重要因素，这些因素可以显著提升SiC MOSFET在功率电路中的开关性能。 碳化硅（SiC）MOSFET支持功率电子电路 ...

Sponsored by: Texas Instruments Even though gallium-nitride transistors are becoming a more popular solution in terms of power switching, the venerable MOSFET still can be used effectively in current ...

A power MOSFET is almost invariably used in today's high-frequency power converter applications being a voltage controlled, fast switching and majority-carrier device. However, MOSFET's major ...

Vishay has extended its fast body diode n-channel mosfet range from 600V to 650V with the EF Series. “They provide additional voltage headroom for industrial, telecom, and renewable energy ...

OMRON Electronic Components Europe has introduced a new range of G3VM MOSFET relays designed to deliver faster switching ...

DURHAM, N.C.--(BUSINESS WIRE)--In a move that heralds a performance revolution in energy efficient power electronics, Cree, Inc. (Nasdaq: CREE), a market leader in silicon carbide (SiC) power devices, ...

MOSFET selection for DC-to-DC switching controllers can be a complicated process. It is not sufficient to merely look at the voltage and current ratings for a MOSFET. A balance between low gate charge ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TPD7107F,” a gate driver switch IPD [1] that controls the conduction and shut-off of current supplied ...

Omron has announced mosfet opto-relays that can switch 3.3Aac or 6.6Adc, giving them the highest-ever current carrying capacity, said the firm. Mosfet relays use light to isolate the primary side, ...