KIOXIA America, Inc. today announced that it has begun sampling 1 new Universal Flash Storage 2 (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced sampling 1 of the industry’s first 2 Universal Flash Storage 3 (UFS) Ver. 4.0 embedded flash memory devices 3 designed for ...

Flash memory devices use two different logical technologies — NOR and NAND — to map data. NOR flash provides high-speed random access, reading and writing data in specific memory locations; it can ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...

KIOXIA has begun sampling a new generation of embedded flash memory devices aimed at smartphones and other compact computing ...

Building on these advancements, the new devices achieve substantial performance increases. They boost sequential write speeds by 25%, random read speeds by 90%, and random write speeds by 95% compared ...

Forbes contributors publish independent expert analyses and insights. This is the third in a set of four blogs about projections for digital storage and memory for the following year that we have been ...

Forbes contributors publish independent expert analyses and insights. This is the second in a set of four blogs about projections for digital storage and memory for the following year that we have ...